Julie obtained a bachelor degree in physics and is currently pursuing a master’s degree in electronics engineering. She has participated into research in electronics engineering since she was a senior in college. She assisted in research concerning gated-metal-insulator-semiconductor tunnel transistor then. In graduated school, she continued conducting more experiment on MIS tunnel diode. Her research is focused on the effect of Al2O3 passivation on the characteristics of MIS tunnel diode, and its performance as a light sensor. She specializes in semiconductor fabrication and semiconductor devices.

  • B.S., Physics, National Taiwan University
  • M.S., Graduate Institute of Electronics Engineering, National Taiwan University


Semiconductor Fabrication, Semiconductor Element